Advances in Microwaves by Leo Young (Eds.)

By Leo Young (Eds.)

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It can be shown, however, that E=constant maximizes the integral j^Edx=V (3) subject to the constraint given by Eq. (2). Since we are seeking the maximum voltage across our piece of semiconductor under avalanche limitations, we replace E(x) by Ec, a, constant, in the above and have Vm = EcL with Ee = (J-^flm (4) Thus, under avalanche limitations the maximum voltage that can be impressed across the semiconductor sample is given by (J i \l/mr(m-l)/m (5) and the critical field is observed to be a function of the length L of the sample.

A microwave tunnel diode amplifier. Microwave J. 8, 62-68 (1965). 45. Lepoff, J. , and Wheeler, G. J. Octave bandwidth tunnel-diode amplifier. IEEE, Trans. Microwave Theory Tech. 12, 21-26 (1964). 46. Burrus, C. , and Trambarulo, R. A millimeter-wave Esaki diode amplifier. Proc. IRE 49, 1075 (1961). 47. Presser, A. Private communication, RCA Electronic Components and Devices (1965). 47a. Lee, C. , X-band tunnel diodes for phased array radar. 3rd Quart. Rep. Contr. NObsr. 89328 Phase II, Gen. Elec.

Absolutely stable hybrid coupled tunnel diode amplifier. Proc. IRE 48, 1321 and 1783 (1960). 35. Feist, W. M. Noise performance and stability of a hybrid coupled tunnel diode amplifier. Proc. IRE 49, 975 (1961). 36. Getsinger, W. J. Prototypes for use in broadbanding reflection amplifiers. IEEE Trans. Microwave Theory Tech. 11, 486-497 (1963). 37. Scanlan, J. , and Lim, J. T. A design theory for optimum broadband reflection amplifiers. IEEE, Trans. Microwave Theory Tech. 12, 504-511 (1964). 37a.

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